2d Materials杂志是一本国际优秀期刊，是一本未开放获取期刊。该杂志近三年影响因子分别为：2026年4.3、2025年4.3、2024年4.5。该杂志近三年CiteScore评价值分别为：2025年8、2024年9.3、2023年10.7。该刊专门致力于推进纳米科技领域的研究，涵盖了纳米科技领域的各个方面，汇集所有专家，促进纳米科技领域的更好协作和信息共享。该期刊为纳米科技领域的科研人员提供了一个高影响力的论坛，使该领域的科研人员、从业人员和学生能够接触到尖端的经验性调查分析、学术对话以及行业科研成果的最新发展。通过收录高质量的原创论文和评论论文，促进纳米科技领域的应用与发展。该期刊还将该领域的创新与应用，以提高研究的质量和实用性。近年来在该刊上发文的国家和地区主要有：Wales（发文量3）、Ukraine（发文量6）、USA（发文量173）、UNITED ARAB EMIRATES（发文量1）、Turkey（发文量3）、Tunisia（发文量1）。
2d Materials是一本由IOP Publishing Ltd.出版社发行的知名纳米科技期刊。该杂志社联系方式TEMPLE CIRCUS, TEMPLE WAY, BRISTOL, ENGLAND, BS1 6BE。审稿过程是确保期刊质量的关键环节。这一时间周期既体现了编辑部对稿件质量的严格把关，也反映了审稿专家对学术研究的尊重和支持。在这个过程中，作者们可以充分利用这段时间对自己的研究成果进行完善和优化，以提高论文的质量和影响力。如果您对该期刊感兴趣，并希望了解更多关于投稿流程、投稿要求和技巧的信息，您可以咨询本站的客服老师，我们将帮助您了解期刊的投稿要求、审稿流程以及可能遇到的问题，并根据您的具体情况提供相应的建议和解决方案。
2d Materials杂志近期中国学者发表的论文主要有：
-
1、Surface charge transfer doping of monolayer MoSe2 for defect detectio
Author: Wang, Xiaoyu; Zhu, Meijie; Ma, Yingying; Li, Wenwen; Sun, Yunxue; Diao, Chunxin; Ma, Jingwen; Wang, Chi; Zhang, Xingshuang; Xu, Guanchen; Feng, Qingliang
-
2、Graphene inversion layer for enhanced photoresponse in layered two-dimensional materials-silicon Schottky diode
Author: Malik, Muhammad; Anwar, Muhammad Abid; Ye, Xuan; Xu, Xinyi; Chen, Yance; Li, Zongwen; Zhang, Zhixiang; Ma, Hanzhi; Fang, Wenzhang; Yu, Bin; Bodepudi, Srikrishna Chanakya; Xu, Yang
-
3、A large interlaboratory electron diffraction study of monolayer graphen
Author: Tillotson, Evan; Thornley, William; Talbott, William; Eggeman, Alexander S.; Kriuchkova, Daria; Sullivan-Allsop, Sam; Smith, Matt; Liu, Xuzhao; Slattery, Ashley; Yap, Pei Lay; Losic, Dusan; Xu, Zhun; Wang, Huan; Ciston, Jim; Rakowski, Alexander; Ribet, Stephanie M.; Savitzky, Benjamin H.; Schuster, Manfred E.; Allen, Christopher S.; Douglas-Henry, Danielle; Nicolosi, Valeria; Herzing, Andrew; O'connell, Jacques; Olivier, Ezra J.; Neethling, Jan; Zou, Yi-Chao; Duran, Ercin; Cai, Rongsheng; Ngo, Duc-The; Gorbachev, Roman; Haas, Jonas; Schlegel, Michael; Meyer, Jannik; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Kang, Sungsu; Park, Jungwon; Erofeev, Ivan; Mirsaidov, Utkur; Ophus, Colin; Rentenberger, Christian; Waitz, Thomas; Kotakoski, Jani; Roy, Abhijit; Arenal, Raul; Pollard, Andrew J.; Haigh, Sarah J
-
4、Enhanced biaxial compressive strain tuning of 2D semiconductors via hot dry transfer on polymer substrate
Author: Cortes-Flores, Alvaro; Henriquez-Guerra, Eudomar; Almonte, Lisa; Gosalbez-Martinez, Daniel; Li, Hao; Castellanos-Gomez, Andres; Calvo, M. Reyes
-
5、Controlled growth and emergent properties of 2D high-entropy material
Author: Wang, Mengchen; Zhang, Qing; Wang, Yongshuai; Li, Lin; Zhang, Ruijie; Geng, Dechao
-
6、The 2D materials roadma
Author: Ren, Wencai; Boggild, Peter; Redwing, Joan; Novoselov, Kostya S.; Sun, Luzhao; Qi, Yue; Jia, Kaicheng; Liu, Zhongfan; Burton, Oliver; Alexander-Webber, Jack; Hofmann, Stephan; Cao, Yang; Long, Yu; Yang, Quan-Hong; Li, Dan; Choi, Soo Ho; Kim, Ki Kang; Lee, Young Hee; Li, Mian; Huang, Qing; Gogotsi, Yury; Clark, Nicholas; Carl, Amy; Gorbachev, Roman; Olsen, Thomas; Rosen, Johanna; Thygesen, Kristian Sommer; Efetov, Dmitri K.; Jessen, Bjarke S.; Yankowitz, Matthew; Barrier, Julien; Kumar, Roshan Krishna; Koppens, Frank H. L.; Deng, Hui; Li, Xiaoqin; Dai, Siyuan; Basov, D. N.; Wang, Xinran; Das, Saptarshi; Duan, Xiangfeng; Yu, Zhihao; Borsch, Markus; Ferrari, Andrea C.; Huber, Rupert; Kira, Mackillo; Xia, Fengnian; Wang, Xiao; Wu, Zhong-Shuai; Feng, Xinliang; Simon, Patrice; Cheng, Hui-Ming; Liu, Bilu; Xie, Yi; Jin, Wanqin; Nair, Rahul Raveendran; Xu, Yan; Zhang, Qing; Katiyar, Ajit K.; Ahn, Jong-Hyun; Aharonovich, Igor; Hersam, Mark C.; Roche, Stephan; Hua, Qilin; Shen, Guozhen; Ren, Tianling; Zhang, Hao-Bin; Koo, Chong Min; Koratkar, Nikhil; Pellegrini, Vittorio; Young, Robert J.; Qu, Bill; Lemme, Max; Pollard, Andrew J
